EtronTech

EM6A9160

2

Rev. 1.4

May 2006

Overview

The EM6A9160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 128 Mbits. It is

internally configured as a quad 2M x 16 DRAM with a synchronous interface (all signals are registered on the positive

edge of the clock signal, CK). Data outputs occur at both rising edges of CK and /CK. Read and write accesses to the

SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in

a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a

Read or Write command. The EM6A9160 provides programmable Read or Write burst lengths of 2, 4, or 8. An auto

precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst

sequence. The refresh functions, either Auto or Self Refresh are easy to use. In addition, EM6A9160 features

programmable DLL option. By having a programmable mode register and extended mode register, the system can

choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring

high memory bandwidth, result in a device particularly well suited to high performance main memory and graphics

applications.