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LBE2009S Datasheet(PDF) 2 Page - NXP Semiconductors |
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LBE2009S Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 16 page 1997 Mar 03 2 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S; LCE2009S FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold metallization • Optimum temperature profile • Excellent performance and reliability. APPLICATIONS • Common emitter class-A linear power amplifiers up to 4 GHz. DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter Fig.1 Simplified outline and symbol (SOT441A). Marking code: LBE2003S = 407; LBE2009S = 409. handbook, halfpage e c b MAM329 Top view 1 4 3 2 Fig.2 Simplified outline and symbol (SOT442A). Marking code: LCE2009S = 408. handbook, halfpage e c b MAM330 Top view 1 4 3 2 QUICK REFERENCE DATA Microwave performance up to Tmb =25 °C in a common emitter class-A amplifier. TYPE NUMBER MODE OF OPERATION f (GHz) VCE (V) IC (mA) PL1 (mW) Gpo (dB) Zi ( Ω) ZL ( Ω) LBE2003S Class-A (CW) linear 2 18 30 ≥200 ≥10 6.2 + j30 17.5 + j7 LBE2009S Class-A (CW) linear 2 18 110 ≥700 ≥9 7.5 + j15 17.5 + j39 LCE2009S WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 |
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