DS30301 Rev. 8 - 2

1 of 4

2N7002T

www.diodes.com

2N7002T

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

·

Low On-Resistance

·

Low Gate Threshold Voltage

·

Low Input Capacitance

·

Fast Switching Speed

·

Low Input/Output Leakage

·

Ultra-Small Surface Mount Package

·

Lead Free/RoHS Compliant (Note 2)

·

Qualified to AEC-Q101 Standards for High Reliability

Characteristic

Symbol

Value

Units

Drain-Source Voltage

60

V

60

V

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V

Drain Current (Note 1)

Continuous

Continuous @ 100°C

Pulsed

115

73

800

mA

Total Power Dissipation (Note 1)

150

mW

Thermal Resistance, Junction to Ambient

833

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Mechanical Data

·

Case: SOT-523

·

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

·

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals: Solderable per MIL-STD-202, Method 208

·

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

·

Terminal Connections: See Diagram

·

Marking: 72 (See Page 3)

·

Ordering & Date Code Information, See Page 3

·

Weight: 0.002 grams (approximate)

A

M

J

L

D

B

D

G

C

S

H

K

G

TOP VIEW

N

SOT-523

Dim

Min

Max

Typ

A

0.15

0.30

0.22

B

0.75

0.85

0.80

C

1.45

1.75

1.60

D

¾

¾

0.50

G

0.90

1.10

1.00

H

1.50

1.70

1.60

J

0.00

0.10

0.05

K

0.60

0.80

0.75

L

0.10

0.30

0.22

M

0.10

0.20

0.12

N

0.45

0.65

0.50

a

0°

8°

¾

All Dimensions in mm

Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,

which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

Source

Gate

Drain

SPICE MODELS: 2N7002T