CTA2P1N datasheet(2/7 Pages) DIODES

Part #	CTA2P1N

Description	COMPLEX TRANSISTOR ARRAY

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Manufacturer	DIODES [Diodes Incorporated]

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2 / 7 page

DS30296 Rev. 7 - 2

2 of 7

CTA2P1N

www.diodes.com

Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element

@ TA = 25°C unless otherwise specified

Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element

@ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage

V(BR)CBO

-40

¾

V

IC = -100mA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-40

¾

V

IC = -1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-5.0

¾

V

IE = -100mA, IC = 0

Collector Cutoff Current

ICEX

¾

-100

nA

VCE = -35V, VEB(OFF) = -0.4V

Base Cutoff Current

IBL

¾

-100

nA

VCE = -35V, VEB(OFF) = -0.4V

ON CHARACTERISTICS (Note 3)

DC Current Gain

hFE

30

60

100

20

¾

300

¾

IC = -100µA, VCE = -1.0V

IC = -1.0mA, VCE = -1.0V

IC = -10mA, VCE = -1.0V

IC = -150mA, VCE = -2.0V

IC = -500mA, VCE = -2.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

¾

-0.40

-0.75

V

IC = -150mA, IB = -15mA

IC = -500mA, IB = -50mA

Base-Emitter Saturation Voltage

VBE(SAT)

-0.75

¾

-0.95

-1.30

V

IC = -150mA, IB = -15mA

IC = -500mA, IB = -50mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Ccb

¾

8.5

pF

VCB = -10V, f = 1.0MHz, IE = 0

Input Capacitance

Ceb

¾

30

pF

VEB = -0.5V, f = 1.0MHz, IC = 0

Input Impedance

hie

1.5

15

kW

VCE = -10V, IC = -1.0mA,

f = 1.0kHz

Voltage Feedback Ratio

hre

0.1

8.0

x 10-4

Small Signal Current Gain

hfe

60

500

¾

Output Admittance

hoe

1.0

100

m

S

Current Gain-Bandwidth Product

fT

200

¾

MHz

VCE = -10V, IC = -20mA,

f = 100MHz

SWITCHING CHARACTERISTICS

Delay Time

td

¾

15

ns

VCC = -30V, IC = -150mA,

VBE(off) = -2.0V, IB1 = -15mA

Rise Time

tr

¾

20

ns

Storage Time

ts

¾

225

ns

VCC = -30V, IC = -150mA,

IB1 = IB2 = -15mA

Fall Time

tf

¾

30

ns

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 3)

Drain-Source Breakdown Voltage

BVDSS

60

70

¾

V

VGS = 0V, ID = 10mA

Zero Gate Voltage Drain Current

@ TC = 25°C

@ TC = 125°C

IDSS

¾

1.0

500

µA

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS

¾

±10

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(th)

1.0

¾

2.0

V

VDS = VGS, ID =-250mA

Static Drain-Source On-Resistance

@ Tj = 25°C

@ Tj = 125°C RDS (ON)

¾

3.2

4.4

7.5

13.5

W

VGS = 5.0V, ID = 0.05A

VGS = 10V, ID = 0.5A

On-State Drain Current

ID(ON)

0.5

1.0

¾

A

VGS = 10V, VDS = 7.5V

Forward Transconductance

gFS

80

¾

mS

VDS =10V, ID = 0.2A

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

¾

22

50

pF

VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

¾

11

25

pF

Reverse Transfer Capacitance

Crss

¾

2.0

5.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

¾

7.0

20

ns

VDD = 30V, ID = 0.2A,

RL = 150W, VGEN = 10V,

RGEN = 25W

Turn-Off Delay Time

tD(OFF)

¾

11

20

ns

Note: 2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found

on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. Short test pulse used to minimize self-heating effect.

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