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STTH9012TV2 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STTH9012TV2
Description  Ultrafast recovery - 1200 V diode
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH9012TV2 Datasheet(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH9012TV
4/8
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4.
Peak reverse recovery current
versus dIF/dt (typical values)
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Single pulse
t (s)
p
I
(A)
RM
0
10
20
30
40
50
60
70
80
0
50
100
150
200
250
300
350
400
450
500
V
R=600V
T
j=125°C
I
F= 2 x IF(AV)
I
F= IF(AV)
I
F= IF(AV)
I
F=0.5 x IF(AV)
I
F=0.5 x IF(AV)
dI /dt(A/µs)
F
Figure 5.
Reverse recovery time versus
dIF/dt (typical values)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values)
t (ns)
rr
200
300
400
500
600
700
800
900
1000
0
50
100
150
200
250
300
350
400
450
500
V
R=600V
T
j=125°C
I
F=0.5 x IF(AV)
I
F= 2 x IF(AV)
I
F=IF(AV)
I
F=IF(AV)
dI /dt(A/µs)
F
Q (µC)
rr
0
2
4
6
8
10
12
0
50
100
150
200
250
300
350
400
450
500
I
F=0.5 x IF(AV)
I
F= IF(AV)
I
F= 2 x IF(AV)
V
R=600V
T
j=125°C
dI /dt(A/µs)
F
Figure 7.
Softness factor versus
dIF/dt (typical values)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
S factor
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
50
100
150
200
250
300
350
400
450
500
I
F = 2 x IF(AV)
V
R=600V
T
j=125°C
dI /dt(A/µs)
F
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
25
50
75
100
125
I
RM
Q
RR
S
factor
I
F = IF(AV)
V
R=600V
Reference: T
j=125°C
t
RR
t
RR
T (°C)
j


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