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2N1485 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N1485
Description  NPN SILICON MEDIUM POWER TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/207
Devices
Qualified Level
2N1483
2N1484
2N1485
2N1486
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
2N1483
2N1485
2N1484
2N1486
Unit
Collector-Emitter Voltage
VCEO
40
55
Vdc
Collector-Base Voltage
VCBO
60
100
Vdc
Emitter-Base Voltage
VEBO
12
Vdc
Collector Current -- Continuous
IC
3.0
Adc
Total Power Dissipation
@ TA = 25
0C (1)
@ TC = 25
0C (2)
PT
1.75
25
W
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
1) Derate linearly 0.010 W/
0C for TA > 250C
2) Derate linearly 0.143 W/
0C for TC > 250C
TO-8*
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N1483, 2N1485
2N1484, 2N1486
V(BR)CEO
40
55
Vdc
Collector-Base Breakdown Voltage
IC = 100 µAdc
2N1483, 2N1485
2N1484, 2N1486
V(BR)CBO
60
100
Vdc
Collector-Emitter Breakdown Voltage
VEB = 1.5 Vdc, IC = 0.25 mAdc
2N1483, 2N1485
2N1484, 2N1486
V(BR)CEX
60
100
Vdc
Collector-Base Cutoff Current
VCB = 30 Vdc
2N1483, 2N1485
VCB = 50 Vdc
2N1484, 2N1486
ICBO
15
15
µAdc
Emitter-Base Cutoff Current
VEB = 12 Vdc
IEBO
15
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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