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2N1481 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N1481
Description  NPN SILICON MEDIUM POWER TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/207
Devices
Qualified Level
2N1479
2N1480
2N1481
2N1482
MAXIMUM RATINGS
Ratings
Symbol
2N1479
2N1481
2N1480
2N1482
Unit
Collector-Emitter Voltage
VCEO
40
55
Vdc
Collector-Base Voltage
VCBO
60
100
Vdc
Emitter-Base Voltage
VEBO
12
Vdc
Collector Current
IC
1.5
Adc
Base-Current
IB
1.0
Adc
Total Power Dissipation @ TA = 25
0C
PT
1.0
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
35
0C/W
TO-5*
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
2N1479, 2N1481
2N1480, 2N1482
V(BR)CEO
40
55
Vdc
Collector-Emitter Breakdown Voltage
VEB = 1.5 Vdc, IC = 0.25 mAdc
2N1479, 2N1481
VEB = 1.5 Vdc, IC = 0.25 mAdc
2N1480, 2N1482
V(BR)CEX
60
100
Vdc
Collector-Base Cutoff Current
VCB = 30 Vdc
2N1479, 2N1481
VCB = 50 Vdc
2N1480, 2N1482
ICBO
5.0
5.0
µAdc
Emitter-Base Cutoff Current
VEB = 12 Vdc
IEBO
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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