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2N1613 Datasheet(PDF) 2 Page - Microsemi Corporation

Part No. 2N1613
Description  NPN LOW POWER SILICON TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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2N718A, 2N1613, 2N1613L JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
hFE
20
35
40
20
120
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
VCE(sat)
1.5
Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
VBE(sat)
1.3
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
h
fe
3.0
Small-Signal Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
hfe
30
35
100
150
Small-Signal Short Circuit Input Impedance
IC = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz
hib
4.0
8.0
Small-Signal Short Circuit Output Admittance
IC = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz
hob
1.0
ηΩ
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
25
pF
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See Figure 1 of MIL-PRF-19500/181)
ton + toff
30
ηs
(3)Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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