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2N1613 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N1613
Description  NPN LOW POWER SILICON TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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 1 page
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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
Devices
Qualified Level
2N718A
2N1613
2N1613L
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
75
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector Current
IC
500
mAdc
Total Power Dissipation
@ TA = +25
0C (1)
2N718A
2N1613, L
@ TC = +25
0C (2)
2N718A
2N1613, L
PT
0.5
0.8
1.8
3.0
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-55 to +175
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
2N718A
2N1613, L
RθJC
97
58
0C/W
1) Derate linearly 4.57 mW/
0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C
2) Derate linearly 17.2 mW/
0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C
TO-18 (TO-206AA)*
2N718A
TO-39 (TO-205AD)*
2N1613
TO-5*
2N1613L
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
V(BR)CEO
30
Vdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, RBE = 10 Ω
V(BR)CER
50
Vdc
Collector-Base Cutoff Current
VCB= 60 Vdc
ICBO
10
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
10
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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