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DIODES |
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Notes: 3. Short duration test pulse used to minimize self-heating effect. DS30104 Rev. 8 - 2 2 of 4 MMBF170 www.diodes.com Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage BVDSS 60 70 ¾ V VGS = 0V, ID = 100 mA Zero Gate Voltage Drain Current IDSS ¾¾ 1.0 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ¾¾ ±10 nA VGS = ±15V, VDS = 0V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) 0.8 2.1 3.0 V VDS =VGS, ID = 250 mA Static Drain-Source On-Resistance RDS (ON) ¾ ¾ ¾ ¾ 5.0 5.3 W VGS = 10V, ID = 200mA VGS = 4.5V, ID = 50mA Forward Transconductance gFS 80 ¾¾ mS VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ¾ 22 40 pF VDS = 10V, VGS = 0V f = 1.0MHz Output Capacitance Coss ¾ 11 30 pF Reverse Transfer Capacitance Crss ¾ 2.0 5.0 pF SWITCHING CHARACTERISTICS Turn-On Time ton ¾¾ 10 ns VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50 W Turn-Off Time toff ¾¾ 10 ns Electrical Characteristics @ TA = 25 °C unless otherwise specified Ordering Information (Note 4) Device Packaging Shipping MMBF170-7-F SOT-23 3000/Tape & Reel Marking Information K6Z K6Z = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code JK L M N P R ST U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 12 3 4 5 6 7 89 O N D Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. |