MMBT5551_1 datasheet(2/4 Pages) DIODES

Part #	MMBT5551

Description	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Download	4 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

Logo

2 / 4 page

DS30061 Rev. 9 - 2

2 of 4

MMBT5551

www.diodes.com

Month

Jan

Feb

March

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Date Code Key

K4N = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: N = 2002

M = Month ex: 9 = September

K4N

Marking Information

Device

Packaging

Shipping

MMBT5551-7-F

SOT-23

3000/Tape & Reel

Ordering Information (Note 4)

Notes:

3. Short duration test pulse used to minimize self-heating effect.

4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Year

1998

1999

2000

2001

2002

2003

2004

2005

2006

2007

2008

2009

Code

J

K

L

M

N

P

R

S

T

U

V

W

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage

V(BR)CBO

180

¾

V

IC = 100mA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

160

¾

V

IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

6.0

¾

V

IE = 10mA, IC = 0

Collector Cutoff Current

ICBO

¾

50

nA

m

A

VCB = 120V, IE = 0

VCB = 120V, IE = 0, TA = 100°C

Emitter Cutoff Current

IEBO

¾

50

nA

VEB = 4.0V, IC = 0

ON CHARACTERISTICS (Note 3)

DC Current Gain

hFE

80

30

¾

250

¾

IC = 1.0mA, VCE = 5.0V

IC = 10mA, VCE = 5.0V

IC = 50mA, VCE = 5.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

¾

0.15

0.20

V

IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

Base-Emitter Saturation Voltage

VBE(SAT)

¾

1.0

V

IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

¾

6.0

pF

VCB = 10V, f = 1.0MHz, IE = 0

Small Signal Current Gain

hfe

50

250

¾

VCE = 10V, IC = 1.0mA,

f = 1.0kHz

Current Gain-Bandwidth Product

fT

100

300

MHz

VCE = 10V, IC = 10mA,

f = 100MHz

Noise Figure

nF

¾

8.0

dB

VCE = 5.0V, IC = 200mA,

RS = 1.0kW, f = 1.0kHz

Electrical Characteristics @ TA = 25°C unless otherwise specified

Similar Part No. - MMBT5551_1

Manufacturer	Part #	Datasheet	Description
Unisonic Technologies	MMBT5551	149Kb / 4P	HIGH VOLTAGE SWITCHING TRANSISTOR
Micro Commercial Compon...	MMBT5551	166Kb / 2P	NPN Plastic Encapsulate Transistor
Galaxy Semi-Conductor H...	MMBT5551	158Kb / 4P	NPN General Purpose Transistor
Guangdong Kexin Industr...	MMBT5551	1Mb / 2P	NPN Transistors
SeCoS Halbleitertechnol...	MMBT5551	331Kb / 3P	General Purpose Transistor

More results

Similar Description - MMBT5551_1

Manufacturer	Part #	Datasheet	Description
Diodes Incorporated	MMBT3904	55Kb / 3P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30036 Rev. 11 - 2
	MMBT4124	42Kb / 2P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30105 Rev. 5 - 2
	MMST3904	441Kb / 4P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30082 Rev. 10 - 2
	MMSTA42	204Kb / 4P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30175 Rev. 9 - 2
Transys Electronics	MMBT3904	200Kb / 2P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Transys Electronics	MMBT5551	170Kb / 2P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Diodes Incorporated	BC847BLP	99Kb / 4P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30525 Rev. 7 - 2
	MMBT4124	79Kb / 3P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
	MMST4401	141Kb / 4P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
	BC817-16	113Kb / 4P	NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR DS11107 Rev. 18 - 2

More results

MMBT5551 Datasheet(PDF) 2 Page - Diodes Incorporated

MMBT5551 Datasheet(HTML) 2 Page - Diodes Incorporated

Similar Part No. - MMBT5551_1

Similar Description - MMBT5551_1

Html Pages

1 2 3 4

Datasheet Download

Link URL