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DMN100 Datasheet(PDF) 1 Page - Diodes Incorporated

Part # DMN100
Description  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN100 Datasheet(HTML) 1 Page - Diodes Incorporated

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Lead-free Green
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
DS30049 Rev. 6 - 2
1 of 3
DMN100
www.diodes.com
ã Diodes Incorporated
DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
Extremely Low On-Resistance:
170m
W @VGS = 4.5V
·
High Drain Current: 1.1A
·
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
·
Lead Free By Design/RoHS Compliant (Note 2)
·
Qualified to AEC-Q101 Standards for High Reliability
·
ESD Protected Gate
·
"Green" Device (Note 3)
Maximum Ratings
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
DMN100
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Drain Current
Continuous
Pulsed
ID
1.1
4.0
A
Total Power Dissipation
Pd
500
mW
Thermal Resistance, Junction to Ambient
RqJA
250
K/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Notes:
1. Pulse width
£ 300ms, duty cycle £ 2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
·
Case: SC-59
·
Case Material - Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
·
Terminal Connections: See Diagram
·
Marking: See Last Page
·
Ordering & Date Code Information: See Last Page
·
Weight: 0.008 grams (approximate)
Mechanical Data
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
D
S
G
SC-59
Dim
Min
Max
A
0.30
0.50
B
1.40
1.80
C
2.50
3.00
D
0.85
1.05
E
0.30
0.70
G
1.70
2.10
H
2.70
3.10
J
¾
0.10
K
1.00
1.40
L
0.55
0.70
M
0.10
0.35
All Dimensions in mm
ESD protected
SPICE MODELS: DMN100


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