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DMN100 Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN100 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 3 page Lead-free Green Source EQUIVALENT CIRCUIT Gate Protection Diode Gate Drain DS30049 Rev. 6 - 2 1 of 3 DMN100 www.diodes.com ã Diodes Incorporated DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · Extremely Low On-Resistance: 170m W @VGS = 4.5V · High Drain Current: 1.1A · Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits · Lead Free By Design/RoHS Compliant (Note 2) · Qualified to AEC-Q101 Standards for High Reliability · ESD Protected Gate · "Green" Device (Note 3) Maximum Ratings @ TA = 25 °C unless otherwise specified Characteristic Symbol DMN100 Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current Continuous Pulsed ID 1.1 4.0 A Total Power Dissipation Pd 500 mW Thermal Resistance, Junction to Ambient RqJA 250 K/W Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C Notes: 1. Pulse width £ 300ms, duty cycle £ 2%. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. · Case: SC-59 · Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 · Moisture Sensitivity: Level 1 per J-STD-020C · Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 · Terminal Connections: See Diagram · Marking: See Last Page · Ordering & Date Code Information: See Last Page · Weight: 0.008 grams (approximate) Mechanical Data A E J L M B C H G D K TOP VIEW D S G SC-59 Dim Min Max A 0.30 0.50 B 1.40 1.80 C 2.50 3.00 D 0.85 1.05 E 0.30 0.70 G 1.70 2.10 H 2.70 3.10 J ¾ 0.10 K 1.00 1.40 L 0.55 0.70 M 0.10 0.35 All Dimensions in mm ESD protected SPICE MODELS: DMN100 |
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