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MMBTA06-7-F Datasheet(PDF) 1 Page - Diodes Incorporated |
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MMBTA06-7-F Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 3 page MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBTA55 / MMBTA56) • Ideal for Low Power Amplification and Switching • Lead Free/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • MMBTA05 Marking (See Page 3): K1G, K1H • MMBTA06 Marking (See Page 3): K1G • Ordering & Date Code Information: See Page 3 • Weight: 0.008 grams (approximate) SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 α 0 ° 8 ° All Dimensions in mm E B C 3 12 A E J L TOP VIEW M B C H G D K Maximum Ratings @T A = 25°C unless otherwise specified Characteristic Symbol MMBTA05 MMBTA06 Unit Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 4.0 V Collector Current - Continuous (Note 1) IC 500 mA Power Dissipation (Note 1) Pd 300 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 417 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @T A = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage MMBTA05 MMBTA06 V(BR)CBO 60 80 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage MMBTA05 MMBTA06 V(BR)CEO 60 80 ⎯ V IC = 1.0mA, IB = 0 B Emitter-Base Breakdown Voltage V(BR)EBO 4.0 ⎯ V IE = 100μA, IC = 0 Collector Cutoff Current MMBTA05 MMBTA06 ICBO ⎯ 100 nA VCB = 60V, IE = 0 VCB = 80V, IE = 0 Collector Cutoff Current MMBTA05 MMBTA06 ICES ⎯ 100 nA VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V ON CHARACTERISTICS (Note 2) DC Current Gain hFE 100 ⎯ ⎯ IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.25 V IC = 100mA, IB = 10mA B Base-Emitter Saturation Voltage VBE(SAT) ⎯ 1.2 V IC = 100mA, VCE = 1.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT 100 ⎯ MHz VCE = 2.0V, IC = 10mA, f = 100MHz Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. DS30037 Rev. 10 - 2 1 of 3 www.diodes.com MMBTA05 / MMBTA06 © Diodes Incorporated SPICE MODEL: MMBTA05 MMBTA06 |
Similar Part No. - MMBTA06-7-F |
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Similar Description - MMBTA06-7-F |
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