IRFZ44NS datasheet(2/8 Pages) PHILIPS

Part #	IRFZ44NS

Description	N-channel enhancement mode TrenchMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

N-channel enhancement mode

IRFZ44NS

TrenchMOS

TM transistor

STATIC CHARACTERISTICS

T

j= 25˚C

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA;

55

-

V

voltage

T

j = -55˚C

50

-

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

2.0

3.0

4.0

V

T

j = 175˚C

1.0

-

V

T

j = -55˚C

-

4.4

I

DSS

Zero gate voltage drain current

V

DS = 55 V; VGS = 0 V;

-

0.05

10

µA

T

j = 175˚C

-

500

µA

I

GSS

Gate source leakage current

V

GS = ±10 V; VDS = 0 V

-

0.04

1

µA

T

j = 175˚C

-

20

µA

±V

(BR)GSS

Gate source breakdown voltage I

G = ±1 mA;

16

-

V

R

DS(ON)

Drain-source on-state

V

GS = 10 V; ID = 25 A

-

15

22

m

Ω

resistance

T

j = 175˚C

-

42

m

Ω

DYNAMIC CHARACTERISTICS

T

mb = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

g

fs

Forward transconductance

V

DS = 25 V; ID = 25 A

6

-

S

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

1350

1800

pF

C

oss

Output capacitance

-

330

400

pF

C

rss

Feedback capacitance

-

155

215

pF

Q

g

Total gate charge

V

DD = 44 V; ID = 50 A; VGS = 10 V

-

62

nC

Q

gs

Gate-cource charge

-

15

nC

Q

gd

Gate-drain (miller) charge

-

26

nC

t

d on

Turn-on delay time

V

DD = 30 V; ID = 25 A;

-

18

26

ns

t

r

Turn-on rise time

V

GS = 10 V; RG = 10 Ω

-

5075ns

t

d off

Turn-off delay time

Resistive load

-

40

50

ns

t

f

Turn-off fall time

-

30

40

ns

L

d

Internal drain inductance

Measured from upper edge of drain

-

2.5

-

nH

tab to centre of die

L

s

Internal source inductance

Measured from source lead

-

7.5

-

nH

soldering point to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

j = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

DR

Continuous reverse drain

-

49

A

current

I

DRM

Pulsed reverse drain current

-

160

A

V

SD

Diode forward voltage

I

F = 25 A; VGS = 0 V

-

0.95

1.2

V

I

F = 40 A; VGS = 0 V

-

1.0

-

t

rr

Reverse recovery time

I

F = 40 A; -dIF/dt = 100 A/µs;

-

47

-

ns

Q

rr

Reverse recovery charge

V

GS = -10 V; VR = 30 V

-

0.15

-

µC

February 1999

2

Rev 1.000

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