IRF640S datasheet(3/9 Pages) PHILIPS

Part #	IRF640S

Description	N-channel TrenchMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

IRF640, IRF640S

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

j = 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

I

S

Continuous source current

-

16

A

(body diode)

I

SM

Pulsed source current (body

-

64

A

diode)

V

SD

Diode forward voltage

I

F = 18 A; VGS = 0 V

-

1.0

1.5

V

t

rr

Reverse recovery time

I

F = 18 A; -dIF/dt = 100 A/µs;

-

130

-

ns

Q

rr

Reverse recovery charge

V

GS = 0 V; VR = 25 V

-

0.8

-

µC

August 1999

3

Rev 1.100

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IRF640S Datasheet(PDF) 3 Page - NXP Semiconductors

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