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MBR4030PT Datasheet(PDF) 1 Page - Diodes Incorporated

Part # MBR4030PT
Description  40A SCHOTTKY BARRIER RECTIFIER
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MBR4030PT Datasheet(HTML) 1 Page - Diodes Incorporated

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DS23019 Rev. 8 - 2
1 of 3
MBR4030PT - MBR4060PT
www.diodes.com
ã Diodes Incorporated
MBR4030PT - MBR4060PT
40A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
P
Q
K
S
M
H
R
D
C
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
·
Schottky Barrier Chip
·
Guard Ring Die Construction for Transient Protection
·
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward Voltage Drop
·
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
·
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
·
Case: TO-3P
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
·
Polarity: As Marked on Body
·
Ordering Information: See Last Page
·
Marking: Type Number
·
Weight: 5.6 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
4030PT
MBR
4035PT
MBR
4040PT
MBR
4045PT
MBR
4050PT
MBR
4060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
35
40
45
50
60
V
RMS Reverse Voltage
VR(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
@ TC = 125
°C
(Note 1)
IO
40
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
400
A
Forward Voltage Drop
@ IF = 20A, TC = 25
°C
@ IF = 20A, TC = 125
°C
VFM
0.70
0.60
0.80
0.70
V
Peak Reverse Current
@ TC = 25
°C
at Rated DC Blocking Voltage
@ TC = 125
°C
IRM
1.0
100
mA
Typical Total Capacitance
(Note 2)
CT
1100
pF
Typical Thermal Resistance Junction to Case
(Note 1)
RqJC
1.4
°C/W
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/
ms
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
TO-3P
Dim
Min
Max
A
1.88
2.08
B
4.68
5.36
C
20.63
22.38
D
18.5
21.5
E
2.1
2.4
G
0.51
0.76
H
15.38
16.25
J
1.90
2.70
K
2.9
Æ
3.65
Æ
L
3.78
4.50
M
5.2
5.7
N
0.89
1.53
P
1.82
2.46
Q
2.92
3.23
R
11.70
12.84
S
¾
6.10
All Dimensions in mm


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