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DTDG23YP Datasheet(PDF) 1 Page - Rohm |
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DTDG23YP Datasheet(HTML) 1 Page - Rohm |
1 / 3 page DTDG23YP Transistors Rev.B 1/2 1A / 60V Digital transistor (with built-in resistors and zener diode) DTDG23YP Applications Inverter, Interface, Driver Features 1) High DC current gain. (Min. 300 at VO / IO=2V / 0.5A) 2) Low Vo(on). (Typ. 0.4V at IO / II=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L-load (an inductive load). Structure NPN epitaxial planar silicon transistor (with built-in resistors and zener diode) Packaging specifications Part No. DTDG23YP MPT3 Taping T100 1000 Package Packaging type Code Basic ordering unit (pieces) External dimensions (Unit : mm) MPT3 (1)Base (2)Collector (3)Emitter 1.5 0.4 1.6 0.5 3.0 0.4 0.4 1.5 1.5 (3) (2) (1) 4.5 Abbreviated symbol : E02 Absolute maximum ratings (Ta=25 °C) Equivalent circuit Parameter Symbol VCC VIN IC ICP Pd Tj Tstg Limits 60 ±10 1 2 1.5 150 −55 to +150 −6 to +40 Unit V A A ∗1 W ∗2 Supply voltage Input voltage Collector current Power dissipation Junction temperature Storage temperature ∗1 Pw 10ms, Duty cycle 2% <− <− ∗2 When mounted on 40 40 0.7mm ceramic board. C C IN R1=2.2k Ω R2=10kΩ OUT GND OUT IN GND R2 R1 Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Conditions VI(off) VO(on) II IO(off) GI fT R2 300 7 80 10 0.3 0.4 3.6 0.5 13 V V mA µA MHz k Ω VCC =5V , IO=100µA VI(on) 2 VO =0.4V , IO=100mA IO/II =500mA/5mA VI =5V VCC =40V , VI=0V VO =2V , IO=500mA VCE =5V , IE= −0.1A , f=30MHz ∗ R1 1.54 2.2 2.86 k Ω Input voltage Output voltage Input current Output current DC current gain Transition frequency Emitter-base resistance ∗ Characteristics of built-in transistor Input resistance − − − − − − − − − − −− − − − − − |
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