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DTDG23YP Datasheet(PDF) 1 Page - Rohm

Part # DTDG23YP
Description  1A / 60V Digital transistor (with built-in resistors and zener diode)
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

DTDG23YP Datasheet(HTML) 1 Page - Rohm

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DTDG23YP
Transistors
Rev.B
1/2
1A / 60V Digital transistor
(with built-in resistors and zener diode)
DTDG23YP
Applications
Inverter, Interface, Driver
Features
1) High DC current gain. (Min. 300 at VO / IO=2V /
0.5A)
2) Low Vo(on). (Typ. 0.4V at IO / II=500mA / 5mA)
3) Built-in zener diode gives strong protection against
reverse surge by L-load (an inductive load).
Structure
NPN epitaxial planar silicon transistor
(with built-in resistors and zener diode)
Packaging specifications
Part No.
DTDG23YP
MPT3
Taping
T100
1000
Package
Packaging type
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.4
0.4
1.5
1.5
(3)
(2)
(1)
4.5
Abbreviated symbol : E02
Absolute maximum ratings (Ta=25
°C)
Equivalent circuit
Parameter
Symbol
VCC
VIN
IC
ICP
Pd
Tj
Tstg
Limits
60
±10
1
2
1.5
150
−55 to +150
−6 to +40
Unit
V
A
A
1
W
2
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
1 Pw 10ms, Duty cycle 2%
<−
<−
2 When mounted on 40 40 0.7mm ceramic board.
C
C
IN
R1=2.2k
Ω R2=10kΩ
OUT
GND
OUT
IN
GND
R2
R1
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
VI(off)
VO(on)
II
IO(off)
GI
fT
R2
300
7
80
10
0.3
0.4
3.6
0.5
13
V
V
mA
µA
MHz
k
VCC
=5V , IO=100µA
VI(on)
2
VO
=0.4V , IO=100mA
IO/II
=500mA/5mA
VI
=5V
VCC
=40V , VI=0V
VO
=2V , IO=500mA
VCE
=5V , IE= 0.1A , f=30MHz
R1
1.54
2.2
2.86
k
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Emitter-base resistance
Characteristics of built-in transistor
Input resistance
−−


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