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HEF4752VN Datasheet(PDF) 4 Page - NXP Semiconductors |
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HEF4752VN Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 6 page  DC CHARACTERISTICS VSS =0 V PARAMETER VDD V SYMBOL Tamb (°C) UNIT CONDITIONS −40 + 25 + 85 MIN. MAX. MIN. MAX. MIN. MAX. Quiescent device current 5 IDD − 50 − 50 − 375 µA all valid input combinations; 10 − 100 − 100 − 750 µAV I =VSS or VDD Input leakage current 10 ± IIN −− − 0,3 − 1 µAVI = 0 or 10 V Input voltage HIGH 5 VIH 3,5 − 3,5 − 3,5 − V inputs: group I 10 7,0 − 7,0 − 7,0 − V Input voltage LOW 5 VIL − 1,5 − 1,5 − 1,5 V inputs: group I 10 − 3,0 − 3,0 − 3,0 V Output voltage HIGH 5 VOH 4,95 − 4,95 − 4,95 − V VI =VSS or VDD; IO< 1 µA 10 9,95 − 9,95 − 9,95 − V Output voltage LOW 5 VOL − 0,05 − 0,05 − 0,05 V VI =VSS or VDD; IO< 1 µA 10 − 0,05 − 0,05 − 0,05 V Input tripping level; 5 Vti 1,5 4,0 1,5 4,0 1,5 4,0 V inputs: group II input voltage increasing 10 3,0 8,0 3,0 8,0 3,0 8,0 V Input tripping level; 5 Vtd 1,0 3,5 1,0 3,5 1,0 3,5 V inputs: group II input voltage decreasing 10 2,0 7,0 2,0 7,0 2,0 7,0 V Output current LOW 5 IOL 0,45 − 0,38 − 0,3 − mA VOL = 0,4 V outputs: groups I and II 10 1,4 − 1,17 − 0,9 − mA VOL = 0,5 V Output current HIGH 5 −IOH 0,3 − 0,25 − 0,2 − mA VOH = 4,6 V outputs: group I 10 0,9 − 0,75 − 0,6 − mA VOH = 9,5 V Output current HIGH 5 −I OH 0,9 − 0,75 − 0,6 − mA VOH = 2,5 V outputs: group I Output current HIGH 5 −IOH 0,6 − 0,5 − 0,4 − mA VOH = 4,6 V outputs: groups II 10 1,8 − 1,5 − 1,2 − mA VOH = 9,5 V Output current HIGH 5 −I OH 1,8 − 1,5 − 1,2 − mA VOH = 2,5 V outputs: group II Total supply current 10 Itot −− typ. 2 −−− mA IOL =IOH = 0; frequency applied to inputs; FCT = 700 kHz; VCT = 400 kHz; RCT = 400 kHz |
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