DTD114GK

Transistors

Rev.B

2/2

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

50

50

5

−

300

−

−−

56

7

−

−

−

−

−

−

−

−

−

−−

−

200

10

0.5

580

0.3

13

V

V

V

µA

µA

V

MHz

k

Ω

=50µA

=1mA

=720µA

=50V

=4V

=50mA / 2.5mA

−

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Emitter-base resistance

∗ Characteristics of built-in transistor.

R

∗

Electrical characteristics curves

1000

500

200

100

50

20

10

5

2

1

500

µ 1m 2m

10m 20m

5m

50m 100m 200m

500m

T

a

=25°C

=5V

Fig.1 DC current transfer ratio

vs. Collector current

(C)

Ta

Ta

Ta

1

500m

200m

100m

50m

20m

10m

5m

2m

1m

500

µ 1m 2m

10m 20m

5m

50m 100m 200m

500m

=20

Fig.2 Collector-Emitter saturation voltage

vs. Collector current

(A)

Ta

Ta

Ta

T

a

=25°C