HEC4750VDF datasheet(9/17 Pages) PHILIPS

Part #	HEC4750VDF

Description	Frequency synthesizer

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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9 / 17 page

January 1995

9

Philips Semiconductors

Product speciﬁcation

Frequency synthesizer

HEF4750V

LSI

DC CHARACTERISTICS

at VDD = 10 V ± 5%; voltages are referenced to VSS = 0 V, unless otherwise speciﬁed; for deﬁnitions see note 1.

PARAMETER

SYMBOL

Tamb (°C

UNIT

NOTES

−40

+ 25

+ 85

MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

Quiescent device

current

IDD

−−

100

−−

100

−−

750

µA2

Input current; logic

inputs, MOD

± IIN

−−

300

−−

300

−−

1000 nA

3

Output leakage current

at 1

⁄2 VDD

3,4

TCA, hold-state

± I

Z

−−

20

−

0,05

20

−−

60 nA

TCC, analogue

switch OFF

± IZ

−−

20

−

0,05

20

−−

60 nA

PC2, high impedance

OFF-state

± I

Z

−−

50

−−

50

−−

500 nA

Logic input voltage

LOW

VIL

 max. 0,3 VDD 

V

HIGH

VIH

 max. 0,7 VDD 

V

Logic output voltage

LOW; at

I

O< 1 µAVOL

−−

50

−−

50

−−

50 mV

3

HIGH

VOH

 min. VDD − 50 mV 

mV

3

Logic output current

LOW; at VOL = 0,5 V

3

outputs OL, PC2,

OUT

IOL

5,5

−−

4,6

−−

3,6

−−

mA

output XTAL

IOL

2,8

−−

2,4

−−

1,9

−−

mA

Logic output current

HIGH;

at VOH =VDD − 0,5 V

3

outputs OL, PC2,OUT

−IOH

1,5

−−

1,3

−−

1,0

−−

mA

output XTAL

−I

OH

1,4

−−

1,2

−−

0,9

−−

mA

Output TCC sink

current

IO

−−

−

2,1

−−

−

mA

3,4,5

Output TCC source

current

−I

O

−−

−

1,9

−−

−

mA

3,4,6

Internal resistance

of TCC

output swing

≤ 200 mV

specified output range:

0,3 VDD to 0,7 VDD

Ri

−−

−

0,7

−−

−

k

Ω

3,4

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