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HFA3127BZ Datasheet(PDF) 4 Page - Intersil Corporation |
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HFA3127BZ Datasheet(HTML) 4 Page - Intersil Corporation |
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4 / 13 page  4 FN3076.13 December 21, 2005 Power Gain-Bandwidth Product, fMAX IC = 10mA, VCE = 5V - 6 - - 2.5 - GHz Base to Emitter Capacitance VBE = -3V - 200 - - 500 - fF Collector to Base Capacitance VCB = 3V - 200 - - 500 - fF Electrical Specifications TA = 25°C (Continued) PARAMETER TEST CONDITIONS DIE SOIC, QFN UNITS MIN TYP MAX MIN TYP MAX Electrical Specifications TA = 25°C PARAMETER TEST CONDITIONS DIE SOIC, QFN UNITS MIN TYP MAX MIN TYP MAX DC PNP CHARACTERISTICS Collector to Base Breakdown Voltage, V(BR)CBO IC = -100µA, IE = 0 10 15 - 10 15 - V Collector to Emitter Breakdown Voltage, V(BR)CEO IC = -100µA, IB = 0 8 15 - 8 15 - V Collector to Emitter Breakdown Voltage, V(BR)CES IC = -100µA, Base Shorted to Emitter 10 15 - 10 15 - V Emitter to Base Breakdown Voltage, V(BR)EBO IE = -10µA, IC = 0 4.5 5 - 4.5 5 - V Collector Cutoff Current, ICEO VCE = -6V, IB = 0 - 2 100 - 2 100 nA Collector Cutoff Current, ICBO VCB = -8V, IE = 0 - 0.1 10 - 0.1 10 nA Collector to Emitter Saturation Voltage, VCE(SAT) IC = -10mA, IB = -1mA - 0.3 0.5 - 0.3 0.5 V Base to Emitter Voltage, VBE IC = -10mA - 0.85 0.95 - 0.85 0.95 V DC Forward-Current Transfer Ratio, hFE IC = -10mA, VCE = -2V 20 60 - 20 60 - Early Voltage, VA IC = -1mA, VCE = -3.5V 10 20 - 10 20 - V Base to Emitter Voltage Drift IC = -10mA - -1.5 - - -1.5 - mV/°C Collector to Collector Leakage - 1 - - 1 - pA Electrical Specifications TA = 25°C PARAMETER TEST CONDITIONS DIE SOIC, QFN UNITS MIN TYP MAX MIN TYP MAX DYNAMIC PNP CHARACTERISTICS Noise Figure f = 1.0GHz, VCE = -5V, IC = -5mA, ZS = 50Ω - 3.5 - - 3.5 - dB fT Current Gain-Bandwidth Product IC = -1mA, VCE = -5V - 2 - - 2 - GHz IC = -10mA, VCE = -5V - 5.5 - - 5.5 - GHz Power Gain-Bandwidth Product IC = -10mA, VCE = -5V - 3 - - 2 - GHz Base to Emitter Capacitance VBE = 3V - 200 - - 500 - fF Collector to Base Capacitance VCB = -3V - 300 - - 600 - fF HFA3046, HFA3096, HFA3127, HFA3128 |
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