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HFA3096B Datasheet(PDF) 3 Page - Intersil Corporation |
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HFA3096B Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 13 page 3 FN3076.13 December 21, 2005 Absolute Maximum Ratings Thermal Information Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V Collector Current (100% Duty Cycle) . . . . . . 18.5mA at TJ = 150°C 34mA at TJ = 125°C 37mA at TJ = 110°C Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA Operating Information Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W) 14 Ld SOIC Package (Note 1) . . . . . . . 120 N/A 16 Ld SOIC Package (Note 1) . . . . . . . 115 N/A QFN Package (Notes 2, 3). . . . . . . . . . 57 10 Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175°C Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. θJA is measured with the component mounted on an evaluation PC board in free air. 2. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside. 3. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. Electrical Specifications TA = 25°C PARAMETER TEST CONDITIONS DIE SOIC, QFN UNITS MIN TYP MAX MIN TYP MAX DC NPN CHARACTERISTICS Collector to Base Breakdown Voltage, V(BR)CBO IC = 100µA, IE = 0 12 18 - 12 18 - V Collector to Emitter Breakdown Voltage, V(BR)CEO IC = 100µA, IB = 0 8 12 - 8 12 - V Collector to Emitter Breakdown Voltage, V(BR)CES IC = 100µA, Base Shorted to Emitter 10 20 - 10 20 - V Emitter to Base Breakdown Voltage, V(BR)EBO IE = 10µA, IC = 0 5.5 6 - 5.5 6 - V Collector-Cutoff-Current, ICEO VCE = 6V, IB = 0 - 2 100 - 2 100 nA Collector-Cutoff-Current, ICBO VCB = 8V, IE = 0 - 0.1 10 - 0.1 10 nA Collector to Emitter Saturation Voltage, VCE(SAT) IC = 10mA, IB = 1mA - 0.3 0.5 - 0.3 0.5 V Base to Emitter Voltage, VBE IC = 10mA - 0.85 0.95 - 0.85 0.95 V DC Forward-Current Transfer Ratio, hFE IC = 10mA, VCE = 2V 40 130 - 40 130 - Early Voltage, VA IC = 1mA, VCE = 3.5V 20 50 - 20 50 - V Base to Emitter Voltage Drift IC = 10mA - -1.5 - - -1.5 - mV/°C Collector to Collector Leakage - 1 - - 1 - pA Electrical Specifications TA = 25°C PARAMETER TEST CONDITIONS DIE SOIC, QFN UNITS MIN TYP MAX MIN TYP MAX DYNAMIC NPN CHARACTERISTICS Noise Figure f = 1.0GHz, VCE = 5V, IC = 5mA, ZS = 50Ω - 3.5 - - 3.5 - dB fT Current Gain-Bandwidth Product IC = 1mA, VCE = 5V - 5.5 - - 5.5 - GHz IC = 10mA, VCE = 5V - 8 - - 8 - GHz HFA3046, HFA3096, HFA3127, HFA3128 |
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