HFA3096B datasheet(3/13 Pages) INTERSIL

Part #	HFA3096B

Description	Ultra High Frequency Transistor Arrays

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Manufacturer	INTERSIL [Intersil Corporation]

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3

FN3076.13

December 21, 2005

Absolute Maximum Ratings

Thermal Information

Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V

Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V

Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V

Collector Current (100% Duty Cycle) . . . . . . 18.5mA at TJ = 150°C

34mA at TJ = 125°C

37mA at TJ = 110°C

Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA

Operating Information

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C

Thermal Resistance (Typical)

θJA (°C/W) θJC (°C/W)

14 Ld SOIC Package (Note 1) . . . . . . .

120

N/A

16 Ld SOIC Package (Note 1) . . . . . . .

115

N/A

QFN Package (Notes 2, 3). . . . . . . . . .

57

10

Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W

Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175°C

Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C

Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C

(SOIC - Lead Tips Only)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1.

θJA is measured with the component mounted on an evaluation PC board in free air.

2. For

θJC, the “case temp” location is the center of the exposed metal pad on the package underside.

3.

θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

Electrical Specifications

TA = 25°C

PARAMETER

TEST CONDITIONS

DIE

SOIC, QFN

UNITS

MIN

TYP

MAX

MIN

TYP

MAX

DC NPN CHARACTERISTICS

Collector to Base Breakdown

Voltage, V(BR)CBO

IC = 100µA, IE = 0

12

18

-

12

18

-

V

Collector to Emitter Breakdown

Voltage, V(BR)CEO

IC = 100µA, IB = 0

8

12

-

8

12

-

V

Collector to Emitter Breakdown

Voltage, V(BR)CES

IC = 100µA, Base Shorted to Emitter

10

20

-

10

20

-

V

Emitter to Base Breakdown

Voltage, V(BR)EBO

IE = 10µA, IC = 0

5.5

6

-

5.5

6

-

V

Collector-Cutoff-Current, ICEO

VCE = 6V, IB = 0

-

2

100

-

2

100

nA

Collector-Cutoff-Current, ICBO

VCB = 8V, IE = 0

-

0.1

10

-

0.1

10

nA

Collector to Emitter Saturation

Voltage, VCE(SAT)

IC = 10mA, IB = 1mA

-

0.3

0.5

-

0.3

0.5

V

Base to Emitter Voltage, VBE

IC = 10mA

-

0.85

0.95

-

0.85

0.95

V

DC Forward-Current Transfer

Ratio, hFE

IC = 10mA, VCE = 2V

40

130

-

40

130

-

Early Voltage, VA

IC = 1mA, VCE = 3.5V

20

50

-

20

50

-

V

Base to Emitter Voltage Drift

IC = 10mA

-

-1.5

-

-1.5

-

mV/°C

Collector to Collector Leakage

-

1

-

1

-

pA

Electrical Specifications

TA = 25°C

PARAMETER

TEST CONDITIONS

DIE

SOIC, QFN

UNITS

MIN

TYP

MAX

MIN

TYP

MAX

DYNAMIC NPN CHARACTERISTICS

Noise Figure

f = 1.0GHz, VCE = 5V,

IC = 5mA, ZS = 50Ω

-

3.5

-

3.5

-

dB

fT Current Gain-Bandwidth

Product

IC = 1mA, VCE = 5V

-

5.5

-

5.5

-

GHz

IC = 10mA, VCE = 5V

-

8

-

8

-

GHz

HFA3046, HFA3096, HFA3127, HFA3128

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