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Die Characteristics

DIE DIMENSIONS:

222mils x 202mils x 14mils

± 1mil (Die Thickness)

INTERFACE MATERIALS:

Glassivation:

Type: SiO2

Thickness: 8k

Å

Top Metallization:

Type: AlSi

Thickness: 11k

Å

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

Metallization Mask Layout

HS-81C55RH, HS-81C56RH

TIMER OUT (6)

IO/M (7)

CE OR CE (8)

RD (9)

WR (10)

ALE (11)

AD0 (12)

AD1 (13)

AD2 (14)

(34) PB5

(33) PB4

(32) PB3

(31) PB2

(30) PB1

(29) PB0

(28) PA7

(27) PA6

HS-81C55RH, HS-81C56RH