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HS9-82C08RH-Q Datasheet(PDF) 2 Page - Intersil Corporation |
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HS9-82C08RH-Q Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 4 page 2 Pinouts 20 LEAD CERAMIC DUAL-IN-LINEMETAL-SEAL PACKAGE (SBDIP) MIL-STD-1835, CDIP2-T20 TOP VIEW 20 LEAD CERAMIC METAL SEALFLATPACK PACKAGE (FLATPACK) MIL-STD-1835, CDFP4-F20 TOP VIEW 11 12 13 14 15 16 17 18 20 19 10 9 8 7 6 5 4 3 2 1 A0 A1 A2 A3 A4 A5 A7 A6 OE GND VDD B1 B2 B3 B0 B4 B5 B6 B7 T/R 2 3 4 5 6 7 8 120 19 18 17 16 15 14 13 A0 A1 A2 A3 A4 A5 A6 A7 9 10 12 11 OE GND VDD B0 B1 B2 B3 B4 B5 B6 B7 T/R PIN DESCRIPTION PIN DESCRIPTION A0-A7 Local Bus Data I/O Pins T/R Transmit/Receive Input B0-B7 System Bus Data I/O Pins OE Active Low Output Enable Logic Diagram NOTE: An Important caveat that is applicable to CMOS devices in general is that unused inputs should never be left floating. This rule applies to inputs connected to a three-state bus. The need for external pull-up resistors during three-state bus conditions is eliminated by the presence of regenerative latches on the following HS-82C08RH pins. A0-7 and B0-7 The functional block diagram depicts one of these pins with the regenerative latch. When the CMOS driver assumes the high impedance state, the latch holds the bus in whatever logic state (high or low) it was before the three- state condition. A transient drive current of ±1.5mA at VDD/2 ±0.5V for 10ns is required to switch the latch. Thus, CMOS device inputs connected to the bus are not allowed to float during three-state conditions. 1 A0 TSB TSB B ENABLE 19 B0 2 A1 TSB TSB 18 B1 3 A2 TSB TSB 17 B2 4 A3 TSB TSB 16 B3 5 A4 TSB TSB 15 B4 6 A5 TSB TSB 14 B5 7 A6 TSB TSB 13 B6 8 A7 TSB TSB 12 B7 A ENABLE OE9 T/R11 HS-82C08RH |
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