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HEF4720BD Datasheet(PDF) 6 Page - NXP Semiconductors |
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HEF4720BD Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 16 page January 1995 6 Philips Semiconductors Product specification 256-bit, 1-bit per word random access memories HEF4720B HEF4720V Read-modify-write cycle Read enable 5 0 ns hold time 10 tRH 0ns 15 0 ns Output hold time 5 60 ns with respect to 10 tVAL2 20 ns write pulse 15 15 ns Read-modify-write 5 1050 ns cycle time 10 tRWC 390 ns 15 270 ns VDD V SYMBOL MIN. TYP. MAX. Fig.3 Read cycle timing diagram. |
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