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SPA-1318 Datasheet(PDF) 1 Page - SIRENZA MICRODEVICES |
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SPA-1318 Datasheet(HTML) 1 Page - SIRENZA MICRODEVICES |
1 / 5 page The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 1 Product Description EDS-101429 Rev I Phone: (800) SMI-MMIC http://www.sirenza.com 303 S. Technology Ct., Broomfield, CO 80021 SPA-1318 2150 MHz 1 Watt Power Amplifier with Active Bias Product Features • High Linearity Performance: +20.1 dBm W-CDMA Channel Power at -50 dBc ACP +47 dBm Typ. OIP3 • On-chip Active Bias Control • Power Control Allows Power Consumption Reduction • Patented High Reliability GaAsHBT Technology • Surface-Mountable Plastic Package Applications • W-CDMA Systems • Multi-Carrier Applications Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. l o b m y S : s n o i t i d n o C t s e T : s r e t e m a r a P Z 0 5 2 = p m e T , s m h O 0 5 = º V , C c c V 0 . 5 = s t i n U . n i M . p y T . x a M f 0 n o i t a r e p O f o y c n e u q e r Fz H M0 1 1 20 7 1 2 P B d 1 n o i s s e r p m o C B d 1 t a r e w o P t u p t u O ] 2 , 1 [ m B d0 . 9 2 P C A r e w o P l e n n a h C t n e c a j d A ] 1 [ P @ A M D C - W T U O m B d 1 . 0 2 = c B d0 . 0 5 -0 . 7 4 - S 1 2 n i a G l a n g i S ll a m S ] 2 , 1 [ B d5 . 1 15 . 2 15 . 3 1 R W S VR W S V t u p n I ] 2 , 1 [ -1 : 5 . 1 P I O 3 t n i o P t p e c r e t n I r e d r O d r i h T t u p t u O ] 2 [ m B d 4 1 + = e n o t r e p t u o r e w o P m B d0 . 7 4 F Ne r u g i F e s i o N ] 2 , 1 [ B d0 . 7 c c It n e r r u C e c i v e D ] 2 , 1 [ A m5 7 20 1 30 3 3 c c Ve g a t l o V e c i v e D ] 2 , 1 [ V5 7 . 40 . 55 2 . 5 R l - j , h t T , ) d a e l - n o i t c n u j ( e c n a t s i s e R l a m r e h T L C º 5 8 =W / C º5 3 VCC VBIAS RFIN N/C RFOUT/ VCC Active Bias Input Match [1] Optimal ACP tune [2] Optimal IP3 tune |
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