The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.

Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are

subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not

authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.

Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.

1

Product Description

EDS-101429 Rev I

Phone: (800) SMI-MMIC

http://www.sirenza.com

303 S. Technology Ct., Broomfield, CO 80021

SPA-1318

2150 MHz 1 Watt Power Amplifier

with Active Bias

Product Features

+20.1 dBm W-CDMA Channel Power

at -50 dBc ACP

+47 dBm Typ. OIP3

Reduction

Applications

Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs

Heterojunction Bipolar Transistor (HBT) amplifier housed in

a low-cost surface-mountable plastic package. These HBT

amplifiers are fabricated using molecular beam epitaxial

growth technology which produces reliable and consistent

performance from wafer to wafer and lot to lot.

This product is specifically designed for use as a driver

amplifier for infrastructure equipment in the 2150 MHz PCS

band. Its high linearity makes it an ideal choice for multi-carrier

and digital applications.

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[1] Optimal ACP tune

[2] Optimal IP3 tune