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ICL7667CBAZA Datasheet(PDF) 6 Page - Intersil Corporation |
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ICL7667CBAZA Datasheet(HTML) 6 Page - Intersil Corporation |
6 / 8 page 6 FN2853.5 April 4, 2006 Direct Drive of MOSFETs Figure 11 shows interfaces between the ICL7667 and typical switching regulator ICs. Note that unlike the DS0026, the ICL7667 does not need a dropping resistor and speedup capacitor between it and the regulator IC. The ICL7667, with its high slew rate and high voltage drive can directly drive the gate of the MOSFET. The SG1527 IC is the same as the SG1525 IC, except that the outputs are inverted. This inversion is needed since ICL7667 is an inverting buffer. Transformer Coupled Drive of MOSFETs Transformers are often used for isolation between the logic and control section and the power section of a switching regulator. The high output drive capability of the ICL7667 enables it to directly drive such transformers. Figure 11 shows a typical transformer coupled drive circuit. PWM ICs with either active high or active low output can be used in this circuit, since any inversion required can be obtained by reversing the windings on the secondaries. Buffered Drivers for Multiple MOSFETs In very high power applications which use a group of MOSFETs in parallel, the input capacitance may be very large and it can be difficult to charge and discharge quickly. Figure 13 shows a circuit which works very well with very large capacitance loads. When the input of the driver is zero, Q1 is held in conduction by the lower half of the ICL7667 and Q2 is clamped off by Q1. When the input goes positive, Q1 is turned off and a current pulse is applied to the gate of Q2 by the upper half of the ICL7667 through the transformer, T1. After about 20ns, T1 saturates and Q2 is held on by its own CGS and the bootstrap circuit of C1, D1 and R1. This bootstrap circuit may not be needed at frequencies greater than 10kHz since the input capacitance of Q2 discharges slowly. 18 16 14 12 10 8 6 4 2 0 -2 0246 810 12 14 16 18 20 ID = 1A VDD = 50V GATE CHARGE - QG (NANO-COULOMBS) 680pF 630pF 212pF VDD = 200V VDD = 375V FIGURE 9. MOSFET GATE DYNAMIC CHARACTERISTICS FIGURE 10A. FIGURE 10B. FIGURE 10. DIRECT DRIVE OF MOSFET GATES SG1527 +VC GND B A ICL7667 +V -V 15V IRF730 IRF730 +165VDC TL494 +VC GND C2 C1 ICL7667 +V -V 15V IRF730 IRF730 +165VDC E2 E1 +15V 1K 1K VOUT ICL7667 |
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