January 1995

3

Philips Semiconductors

Product specification

Quadruple bilateral switches

HEF4066B

gates

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

DC CHARACTERISTICS

Power dissipation per switch

P

max.

100

mW

For other RATINGS see Family Specifications

V

SYMBOL

MIN.

TYP.

MAX.

CONDITIONS

ON resistance

5

−

350

2500

Ω

10

−

80

245

Ω

15

−

60

175

Ω

see Fig.4

ON resistance

5

−

115

340

Ω

10

−

50

160

Ω

15

−

40

115

Ω

see Fig.4

ON resistance

5

−

120

365

Ω

10

−

65

200

Ω

15

−

50

155

Ω

see Fig.4

‘

∆’ ON resistance

5

∆R

ON

−

25

−Ω

between any two

10

−

10

−Ω

channels

15

−

5

−Ω

see Fig.4

OFF state leakage

5

−−

−

nA

current, any

10

−−

−

nA

channel OFF

15

−−

200 nA

5

−

2,25

1 V

see Fig.9

LOW

10

−

4,50

2 V

15

−

6,75

2 V

V

SYMBOL

CONDITIONS

−40

+25

+85

MAX.

MAX.

MAX.

Quiescent device

5

1,0

1,0

7,5

current

10

2,0

2,0

15,0

µA

input combinations;

15

4,0

4,0

30,0

15

−

300

1000 nA