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SGA-9189 Datasheet(PDF) 2 Page - SIRENZA MICRODEVICES |
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SGA-9189 Datasheet(HTML) 2 Page - SIRENZA MICRODEVICES |
2 / 4 page Broomfield, CO 80021 2 EDS-101497 Rev H 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com SGA-9189 Medium Power Discrete SiGe Transistor Absolute Maximum Ratings Typical Performance - Engineering Application Circuits (See AN-021) Data above represents typical performance of the application circuits noted in Application Note AN-021. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local sales representative. Z SOPT E B C Z LOPT 1 P OUT= +10 dBm per tone for VCE=5V, 1 MHz tone spacing 2 P OUT= +6 dBm per tone for VCE=3V, 1 MHz tone spacing q e r F ) z H M ( V E C ) V ( I Q C ) A m ( B d 1 P ) m B d ( 3 P I O 1 ) m B d ( n i a G ) B d ( 1 1 S ) B d ( 2 2 S ) B d ( F N ) B d ( Z T P O S ( Ω Ω Ω Ω Ω) Z T P O L ( Ω Ω Ω Ω Ω) 5 4 95 4 8 18 . 5 25 . 9 38 . 8 14 1 -6 2 -1 . 25 8 . 0 j - 8 . 69 . 5 j + 6 1 0 6 9 15 9 7 15 . 5 20 . 0 42 . 2 13 2 -1 2 -4 . 22 . 1 1 j - 6 . 77 . 0 j + 8 . 2 2 0 4 1 25 0 8 14 . 5 20 . 9 33 . 1 10 2 -4 1 -6 . 24 . 3 j + 1 . 8 10 . 9 j - 8 . 3 2 0 4 4 25 0 8 14 . 5 20 . 0 42 . 0 10 2 -7 1 -7 . 21 . 5 1 j - 6 . 57 . 2 j - 1 . 3 2 q e r F ) z H M ( V E C ) V ( I Q C ) A m ( B d 1 P ) m B d ( 3 P I O 2 ) m B d ( n i a G ) B d ( 1 1 S ) B d ( 2 2 S ) B d ( F N ) B d ( Z T P O S ( Ω Ω Ω Ω Ω) Z T P O L ( Ω Ω Ω Ω Ω) 5 4 93 5 6 11 . 2 23 . 4 37 . 7 18 1 -1 1 -1 . 26 . 1 j - 6 . 94 . 1 j + 0 . 1 1 0 6 9 13 2 6 14 . 2 20 . 5 38 . 1 18 1 -6 1 -2 . 21 . 3 1 j - 8 . 79 . 2 j - 3 . 9 1 0 4 4 23 5 6 12 . 3 23 . 5 39 . 90 2 -5 1 -6 . 20 . 6 1 j - 1 . 85 . 6 j - 0 . 1 2 Maximum Recommended Operational Dissipated Power 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -40 -10 20 50 80 110 140 Lead Temperature (C) Operational Limit (Tj<130C) Parameter Absolute Limit Max Base Current (IB) 5 mA Max Device Current (ICE) 200 mA Max Collector-Emitter Voltage (VCEO) 7 V Max Collector-Base Voltage (VCBO) 20 V Max Emitter-Base Voltage (VEBO) 4.8 V Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) See Graph Max. Storage Temp. +150°C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD *Note: Load condition, ZL = 50 Ohms |
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