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CEU4269 Datasheet(PDF) 3 Page - Chino-Excel Technology |
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CEU4269 Datasheet(HTML) 3 Page - Chino-Excel Technology |
3 / 7 page CEU4269 P-Channel Electrical Characteristics T A = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance c Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 45 37 -1 -3 -100 100 -1 m Ω V nA nA µ A V S 3 Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -40 VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -5A VGS = -4.5V, ID = -3A VDS = -10V, ID = -5A VDD = -20V, ID = -5A, VGS = -10V, RGEN = 3Ω VDS = -20V, ID = -5A, VGS = -10V VDS = -20V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1.0A 1120 210 125 13 6 38 7 26 12 64 14 19.2 3 4 25.3 -8 -1.2 3 65 50 m Ω pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A. |
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