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CEU4269 Datasheet(PDF) 3 Page - Chino-Excel Technology

Part # CEU4269
Description  Dual Enhancement Mode Field Effect Transistor (N and P Channel)
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Manufacturer  CET [Chino-Excel Technology]
Direct Link  http://www.cetsemi.com
Logo CET - Chino-Excel Technology

CEU4269 Datasheet(HTML) 3 Page - Chino-Excel Technology

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CEU4269
P-Channel Electrical Characteristics T
A = 25 C unless otherwise noted
Parameter
Symbol
Min
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Forward Transconductance c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSR
IGSSF
45
37
-1
-3
-100
100
-1
m
V
nA
nA
µ
A
V
S
3
Gate Body Leakage Current, Reverse
On Characteristics
Dynamic Characteristics d
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-On Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
Test Condition
VGS = 0V, ID = -250µA
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
VSD
Typ
Max
-40
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -5A
VGS = -4.5V, ID = -3A
VDS = -10V, ID = -5A
VDD = -20V, ID = -5A,
VGS = -10V, RGEN = 3Ω
VDS = -20V, ID = -5A,
VGS = -10V
VDS = -20V, VGS = 0V,
f = 1.0 MHz
VGS = 0V, IS = -1.0A
1120
210
125
13
6
38
7
26
12
64
14
19.2
3
4
25.3
-8
-1.2
3
65
50
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A.


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