CED1710 datasheet(3/4 Pages) CET

Part #	CED1710

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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3 / 4 page

3

Ciss

Coss

Crss

1200

1000

800

600

400

200

0

5

10

15

20

25

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

2.2

1.9

1.6

1.3

1.0

0.7

0.4

V

GS=10V

I

D=15A

-100

-50

0

50

100

150

200

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V

DS=VGS

I

D=250µA

-50

-25

0

25

50

75

100

125

150

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

0.2

0.6

1.0

1.4

10

1

10

0

10

2

2.2

1.8

V

GS=0V

5

4

3

2

1

0

0.0

0.5

1.0

2.0

1.5

6

2.5

3.0

V

GS=5V

V

GS=4V

V

GS=10,8,6V

CED1710/CEU1710

40

30

20

10

0

1

2

3

4

50

5

6

7

T

J=125 C

-55 C

25 C

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