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CEU63A3 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEU63A3 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page N-Channel Enhancement Mode Field Effect Transistor CED63A3/CEU63A3 FEATURES 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 30 0.45 57 150 55 ±20 V W A A V W/ C 1 S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D RDS(ON) = 14mΩ @VGS = 4.5V. Lead free product is acquired. Rev 2. 2006.Nov http://www.cetsemi.com Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 50 2.2 RθJC RθJA Details are subject to change without notice . |
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