HEF4011BN datasheet(3/3 Pages) PHILIPS

Part #	HEF4011BN

Description	Quadruple 2-input NAND gate

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 3 page

January 1995

3

Philips Semiconductors

Product speciﬁcation

Quadruple 2-input NAND gate

HEF4011B

gates

AC CHARACTERISTICS

VSS = 0 V; Tamb =25 °C; CL = 50 pF; input transition times ≤ 20 ns

VDD

V

SYMBOL

TYP

MAX

TYPICAL EXTRAPOLATION

FORMULA

Propagation delays

5

55

110

ns

28 ns

+ (0,55 ns/pF) CL

In → On

10

tPHL; tPLH

25

45

ns

14 ns

+ (0,23 ns/pF) CL

15

20

35

ns

12 ns

+ (0,16 ns/pF) CL

Output transition times

5

60

120

ns

10 ns

+ (1,0 ns/pF) CL

HIGH to LOW

10

tTHL

30

60

ns

9 ns

+ (0,42 ns/pF) CL

15

20

40

ns

6 ns

+ (0,28 ns/pF) CL

5

60

120

ns

10 ns

+ (1,0 ns/pF) CL

LOW to HIGH

10

tTLH

30

60

ns

9 ns

+ (0,42 ns/pF) CL

15

20

40

ns

6 ns

+ (0,28 ns/pF) CL

VDD

V

TYPICAL FORMULA FOR P (

µW)

Dynamic power

5

1300 fi +∑ (foCL) × VDD2

where

dissipation per

10

6000 fi +∑ (foCL) × VDD2

fi = input freq. (MHz)

package (P)

15

20 100 fi +∑ (foCL) × VDD2

fo = output freq. (MHz)

CL = load capacitance (pF)

∑ (f

oCL) = sum of outputs

VDD = supply voltage (V)

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