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CEPF630B Datasheet(PDF) 2 Page - Chino-Excel Technology |
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CEPF630B Datasheet(HTML) 2 Page - Chino-Excel Technology |
2 / 4 page Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forwand Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.4 0.34 2 4 -100 100 25 Ω V nA nA µ A V S 4 - 195 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD Typ Max 200 VDS = 200V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 4.5A VDS = 40V, ID = 4.5A VDD = 100V, ID = 9A, VGS = 10V, RGEN = 25Ω VDS = 160V, ID = 9A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 9A 550 100 30 25 84 72 77 50 150 130 140 22 3 12 29 9 1.5 7 pF pF pF ns ns ns ns nC nC nC A V 4 CEPF630B/CEBF630B CEIF630B/CEFF630B Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L = 3mH, IAS = 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 6A . |
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