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N-Channel Enhancement Mode Field Effect Transistor CEP3120/CEB3120 FEATURES 30V, 40A,RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 30 0.29 43 160 40 ±20 V W A A V W/ C 1 S G D G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 Lead free product is acquired. http://www.cetsemi.com Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 3.5 R θJC R θJA Details are subject to change without notice . Rev 1. 2006.Sep |
