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CEP3120/CEB3120 Electrical Characteristics T A = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 15 11 1 -100 100 1 m Ω V nA nA µ A V 2 Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 30 VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 40A VGS = 4.5V, ID =32A VDS = 15V, ID = 40A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 40A 955 155 75 13 3.4 30 6.8 26 6.8 60 13.6 13.1 2.7 1 17.4 40 1.3 22 17 m Ω pF pF pF ns ns ns ns nC nC nC A V 3 5 VDD = 15V, ID = 10A, VGS = 10V, RGEN = 0.3Ω Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. |
