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CEF10N4 Datasheet(PDF) 2 Page - Chino-Excel Technology |
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CEF10N4 Datasheet(HTML) 2 Page - Chino-Excel Technology |
2 / 4 page Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.7 0.6 2 4 -500 500 100 Ω V nA nA µ A V S 4 - 51 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD Typ Max 450 VDS = 450V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 6A VDS = 50V, ID = 6A VDD = 200V, ID = 10A, VGS = 10V, RGEN = 9.1Ω VDS = 320V, ID = 10A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 10A 1400 330 120 14 27 50 24 75 125 100 60 48 4 15 65 10 2.0 6 pF pF pF ns ns ns ns nC nC nC A V -100 100 25 3 4 CEP10N4/CEB10N4 CEI10N4/CEF10N4 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =9.16mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 5.6A . |
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