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CEM6601 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEM6601 Datasheet(HTML) 1 Page - Chino-Excel Technology |
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1 / 4 page  http://www.cetsemi.com Rev 2. 2006.Oct P-Channel Enhancement Mode Field Effect Transistor CEM6601 FEATURES -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted 1 SO-8 1 D D D D S S S G 1 2 3 4 8 7 6 5 Lead free product is acquired. Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM -60 2.5 -17 -4.3 ±20 V W A A V Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units C/W 50 RθJA Details are subject to change without notice . |
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