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CEH2321 Datasheet(PDF) 3 Page - Chino-Excel Technology |
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CEH2321 Datasheet(HTML) 3 Page - Chino-Excel Technology |
3 / 4 page CEH2321 3 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 2.2 1.9 1.6 1.3 1.0 0.7 0.4 V GS=-4.5V I D=-4.5A -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V DS=VGS I D=-250µA -50 -25 0 25 50 75 100 125 150 -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 15 12 9 6 3 0 0.0 0.5 2.0 2.5 1.5 1.0 -V GS=2.0V -V GS=1.5V 10 0 10 1 0.2 0.4 0.6 0.8 10 -1 1.2 1.0 V GS=0V -V GS=4.5,3.0,2.5V 10 8 6 4 2 0 0.0 1.0 2.0 3.0 0.5 1.5 2.5 T J=125 C -55 C 25 C Ciss Coss Crss 2400 2000 1600 1200 800 400 0 0 2 4 6 8 10 |
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