tm

©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FJY4004R Rev. A

November 2006

FJY4004R

PNP Epitaxial Silicon Transistor

Features

• Switching circuit, Inverter, Interface circuit, Driver Circuit

• Complement to FJY3004R

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

* Minimum land pad size.

* Pulse Test: PW

≤300µs, Duty Cycle≤2%

Symbol

Parameter

Value

Units

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-10

V

Collector Current

-100

mA

Storage Temperature Range

-55~150

°C

Junction Temperature

150

°C

Collector Power Dissipation

200

mW

Symbol

Parameter

Max

Units

Thermal Resistance, Junction to Ambient

600

°C/W

Symbol

Parameter

Test Condition

MIN

Typ

MAX

Units

Collector-Emitter Breakdown Voltage

-50

V

Collector-Base Breakdown Voltage

-50

V

Collector-Cutoff Current

-0.1

uA

DC Current Gain

68

Collector-Emitter Saturation Voltage

-0.3

V

Current Gain - Bandwidth Product

200

MHz

Output

Capacitance

5.5

pF

Input Off Voltage

-0.5

V

Input On Voltage

-3.0

V

Input Resistor

32

47

62

K

Ω

Resistor Ratio

0.9

1.0

1.1

SOT - 523F

E

B

C

Eqivalent Circuit

BE

C

S54