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FDMA1023PZ Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDMA1023PZ Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  FDMA1023PZ Rev.B www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250μA, VGS = 0V –20 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = –250μA, referenced to 25°C –11 mV/°C IDSS Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 μA IGSS Gate to Source Leakage Current VGS = ±8V, VDS = 0V ±10 μA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250μA –0.4 –0.7 –1.5 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ID = –250μA, referenced to 25°C 2.5 mV/°C rDS(on) Static Drain to Source On-Resistance VGS = –4.5V, ID = –3.7A 60 72 m Ω VGS = –2.5V, ID = –3.2A 75 95 VGS = –1.8V, ID = –2.0A 100 130 VGS = –1.5V, ID = –1.0A 130 195 VGS = –4.5V, ID = –3.7A,TJ =125°C 81 91 gFS Forward Transconductance VDS = –5V, ID = –3.7A 12 S Dynamic Characteristics Ciss Input Capacitance VDS = –10V, VGS = 0V, f = 1MHz 490 655 pF Coss Output Capacitance 100 135 pF Crss Reverse Transfer Capacitance 90 135 pF Switching Characteristics td(on) Turn-On Delay Time VDD = –10V, ID = –1A VGS = –4.5V, RGEN = 6Ω 9 18 ns tr Rise Time 12 22 ns td(off) Turn-Off Delay Time 64 103 ns tf Fall Time 37 60 ns Qg(TOT) Total Gate Charge VDD = –10V, ID = –3.7A VGS = –4.5V 8.6 12 nC Qgs Gate to Source Gate Charge 0.7 nC Qgd Gate to Drain “Miller” Charge 2.0 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current –1.1 A VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.1A (Note 2) –0.8 –1.2 V trr Reverse Recovery Time IF = –3.7A, di/dt = 100A/μs 32 48 ns Qrr Reverse Recovery Charge 15 23 nC |
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