©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDB33N25 / FDI33N25 Rev A

May 2006

FDB33N25 / FDI33N25

250V N-Channel MOSFET

Features

• Low gate charge ( typical 36.8 nC)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

FDB Series

FDI Series

GS

D

GS

D

D

G

S

Absolute Maximum Ratings

Symbol

Parameter

FDB33N25 / FDI33N25

Unit

Drain-Source Voltage

250

V

Drain Current

33

20.4

A

A

Drain Current

- Pulsed

(Note 1)

132

A

Gate-Source voltage

±30

V

Single Pulsed Avalanche Energy

(Note 2)

918

mJ

Avalanche Current

(Note 1)

33

A

Repetitive Avalanche Energy

(Note 1)

23.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate above 25

°C

235

1.89

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Min.

Max.

Unit

Thermal Resistance, Junction-to-Case

--

0.53

°C/W

Thermal Resistance, Junction-to-Ambient*

--

40

°C/W

Thermal Resistance, Junction-to-Ambient

--

62.5

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)