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FDI33N25TU Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDI33N25TU Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB33N25 / FDI33N25 Rev A May 2006 UniFETTM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) •Low Crss ( typical 39 pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D2-PAK FDB Series I2-PAK FDI Series GS D GS D D G S Absolute Maximum Ratings Symbol Parameter FDB33N25 / FDI33N25 Unit VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 33 20.4 A A IDM Drain Current - Pulsed (Note 1) 132 A VGSS Gate-Source voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 918 mJ IAR Avalanche Current (Note 1) 33 A EAR Repetitive Avalanche Energy (Note 1) 23.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25 °C 235 1.89 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case -- 0.53 °C/W RθJA* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) |
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