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AS358G-E1 Datasheet(PDF) 4 Page - BCD Semiconductor Manufacturing Limited |
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AS358G-E1 Datasheet(HTML) 4 Page - BCD Semiconductor Manufacturing Limited |
4 / 15 page LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A 4 BCD Semiconductor Manufacturing Limited Sep. 2006 Rev. 1. 6 Data Sheet Parameter Symbol Value Unit Power Supply Voltage VCC 40 V Differential Input Voltage VID 40 V Input Voltage VIC -0.3 to 40 V Power Dissipation (TA=25 oC) PD DIP-8 830 mW SOIC-8 550 TSSOP-8 500 MSOP-8 470 Operating Junction Temperature TJ 150 oC Storage Temperature Range TSTG -65 to 150 oC Lead Temperature (Soldering, 10 Seconds) TLEAD 260 oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Absolute Maximum Ratings (Note 1) Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage VCC 336 V Ambient Operating Temperature Range TA -40 85 oC |
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