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CGY2021G Datasheet(PDF) 7 Page - NXP Semiconductors |
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CGY2021G Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page 1997 Apr 03 7 Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G AC CHARACTERISTICS VDD = 4.5 V; Tamb =25 °C; general operating conditions applied; unless otherwise specified. Measured and guaranteed on CGY2021G evaluation board. Notes 1. Including the 82 Ω resistor connected in parallel at the power amplifier input on the evaluation board. 2. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1 load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 seconds test period. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Power amplifier Pi input power −2 − +2 dBm S11 input return loss 50 Ω source; note 1 −−−10 dB fRF RF frequency range DCS 1710 − 1785 MHz PCS 1850 − 1910 MHz Po(max) maximum output power Tamb =25 °C; VDD = 4.5 V 33 34 − dBm Tamb = −20 to +85 °C; VDD = 4.2 V 31 −− dBm η efficiency DCS; at Po(max) 40 50 − % PCS; at Po(max) − 47 − % RS optimum series load resistance − 6 −Ω CS optimum series load capacitance − 11 − pF Po(off) isolation PA OFF; Pi = 0 dBm −−50 − dBm NRX output noise in RX band −−−121 dBm/Hz H2 2nd harmonic level −−40 − dBc H3 3rd harmonic level −−35 − dBc Stab stability note 2 −−−50 dBc Power sensor driver Po(DET) sensor driver output power RL = 100 Ω; relative to PA output power into 50 Ω load −−25 − dBc |
Similar Part No. - CGY2021G |
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Similar Description - CGY2021G |
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