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CBT3245DB Datasheet(PDF) 4 Page - NXP Semiconductors |
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CBT3245DB Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 10 page Philips Semiconductors Preliminary specification CBT3245 Octal bus switch with output enable 1998 Dec 08 4 DC ELECTRICAL CHARACTERISTICS LIMITS SYMBOL PARAMETER TEST CONDITIONS Tamb = –40°C to +85°C UNIT Min Typ1 Max VIK Input clamp voltage VCC = 4.5V; II = –18mA –1.2 V II Input leakage current VCC = 5.5V; VI = GND or 5.5V ±5 µA ICC Quiescent supply current2 VCC = 5.5V; IO = 0, VI = VCC or GND 50 µA ∆ICC Additional supply current per input pin2 VCC = 5.5V, one input at 3.4V, other inputs at VCC or GND 3.5 mA CI Control pins VI= 3V or 0, OE = VCC 3 pF CIO(OFF) Power-off leakage current VO = 3V or 0 6 pF 3 VCC = 4.5V; V1 = 0V; II = 64mA 5 7 ron3 On-resistance VCC = 4.5V; V1 = 0V; II = 30mA 5 7 Ω VCC = 4.5V; V1 = 2.4V; II = 15mA 10 15 NOTES: 1. All typical values are at VCC = 5V, TA = 25 C 2. This is the increase in supply current for each input that is at the specified TTL voltage level rather than VCC or GND 3. Measured by the voltage drop between the A and the B terminals at the indicated current through the switch. On-state resistance is determined by the lowest voltage of the two (A or B) terminals. AC CHARACTERISTICS GND = 0V; tR; CL = 50pF 74CBT3245 SYMBOL PARAMETER FROM (INPUT) TO (OUTPUT) Tamb = –40°C to +85°C VCC = +5.0V ±0.5V UNIT Min Max tpd Propagation delay1 A or B B or A .25 ns ten Output enable time to High and Low level OE A or B ns tdis Output disable time from High and Low level OE A or B ns NOTES: 1. This parameter is warranted but not production tested. The propagation delay is based on the RC time constant of the typical on-state resistance of the switch and a load capacitance of 50 pF, when driven by an ideal voltage source (zero output impedance). |
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