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BZV49-C8V2 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BZV49-C8V2 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 10 page 2005 Feb 03 6 Philips Semiconductors Product specification Voltage regulator diodes BZV49 series THERMAL CHARACTERISTICS Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-tp) thermal resistance from junction to tie-point 15 K/W Rth(j-a) thermal resistance from junction to ambient note 1 125 K/W GRAPHICAL DATA Fig.2 Maximum permissible non-repetitive peak reverse power dissipation versus duration. handbook, halfpage MBG801 103 1 duration (ms) PZSM (W) 10 102 10−1 10 1 (1) (2) (1) Tj =25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Fig.3 Forward current as a function of forward voltage; typical values. handbook, halfpage 0.6 1 300 100 0 200 MBG781 0.8 VF (V) IF (mA) Tj =25 °C. |
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