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BZV85-C5V1 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BZV85-C5V1 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 May 11 2 Philips Semiconductors Product specification Voltage regulator diodes BZV85 series FEATURES • Total power dissipation: max. 1.3 W • Tolerance series: approx. ±5% • Working voltage range: nom. 3.6 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 60 W. APPLICATIONS • Stabilization purposes. DESCRIPTION Medium-power voltage regulator diodes in hermetically sealed leaded glass SOD66 (DO-41) packages. The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 33 types with nominal working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75). Fig.1 Simplified outline (SOD66; DO-41) and symbol. The diodes are type branded. handbook, halfpage MAM241 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. 2. If the leads are kept at Ttp =55 °C at 4 mm from body. ELECTRICAL CHARACTERISTICS Total series Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 500 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj =25 °C prior to surge; see Fig.3 see Table “Per type” tp = 10 ms; half sinewave; Tj =25 °C prior to surge see Table “Per type” Ptot total power dissipation Tamb =25 °C; lead length 10 mm; note 1 − 1W note 2 − 1.3 W PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj =25 °C prior to surge − 60 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 50 mA; see Fig.4 1 V |
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