BYW29F-100 datasheet(2/6 Pages) PHILIPS

Part #	BYW29F-100

Description	Rectifier diodes ultrafast

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

Rectifier diodes

BYW29F series

ultrafast

ISOLATION

T

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from

R.H.

≤ 65% ; clean and dustfree

-

1500

V

both terminals to external

heatsink

C

isol

Capacitance from cathode to

f = 1 MHz

-

12

-

pF

external heatsink

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-hs

Thermal resistance junction to

with heatsink compound

-

5.5

K/W

mounting base

without heatsink compound

-

7.2

K/W

R

th j-a

Thermal resistance junction to

in free air

-

55

-

K/W

ambient

STATIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

F

Forward voltage

I

F = 8 A; Tj = 150˚C

-

0.80

0.895

V

I

F = 8 A

-

0.92

1.05

V

I

F = 20 A

-

1.1

1.3

V

I

R

Reverse current

V

R = VRWM; Tj = 100 ˚C

-

0.3

0.6

mA

V

R = VRWM

-

2

10

µA

DYNAMIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Q

s

Reverse recovery charge

I

F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs

-

4

11

nC

t

rr

Reverse recovery time

I

F = 1 A; VR ≥ 30 V;

-

20

25

ns

-dI

F/dt = 100 A/µs

I

rrm

Peak reverse recovery current

I

F = 10 A; VR ≥ 30 V; Tj = 100 ˚C;

-

1

2

A

-dI

F/dt = 50 A/µs

V

fr

Forward recovery voltage

I

F = 1 A; dIF/dt = 10 A/µs

-

1

-

V

October 1994

2

Rev 1.100

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BYW29F-100 Datasheet(PDF) 2 Page - NXP Semiconductors

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