NTB65N02R datasheet(3/8 Pages) ONSEMI

Part #	NTB65N02R

Description	Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK

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Manufacturer	ONSEMI [ON Semiconductor]

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NTB65N02R, NTP65N02R

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3

0

20

40

60

80

100

120

0

246

8

10

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

0.004

0.008

0.012

0.016

0.02

0.024

0.028

10

20

30

40

50

60

70

80

90

100 110 120

Figure 2. Transfer Characteristics

Figure 3. On−Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (A)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 150°C

TJ = 125°C

TJ = 25°C

TJ = −55°C

VGS = 10 V

0.004

0.008

0.012

0.016

0.02

0.024

0.028

10

20

30

40

50

60

70

80

90

100 110 120

TJ = 25°C

TJ = −55°C

TJ = 150°C

TJ = 125°C

VGS = 4.5 V

Figure 4. On−Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (A)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

−50

−25

0

25

50

75

100

125

150

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

10

100

1000

10000

0

5

10

15

20

25

Figure 6. Drain−to−Source Leakage Current

versus Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 100°C

TJ = 150°C

TJ = 125°C

0

20

40

60

80

100

120

0

123

5

6

TJ = −55°C

TJ = 25°C

TJ = 150°C

VGS = 4.5 V

VGS = 10 V

VGS = 4.0 V

VGS = 6.0 V

VGS = 5.5 V

VGS = 8.0 V

VGS = 5.0 V

VGS = 3.5 V

VGS = 3.0 V

VGS = 2.5 V

VDS w 10 V

ID = 30 A

VGS = 4.5 V and 10 V

Similar Part No. - NTB65N02R

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ON Semiconductor	NTB65N02R	47Kb / 4P	Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK October, 2002 ??Rev. 0
ON Semiconductor	NTB65N02RT4	47Kb / 4P	Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK October, 2002 ??Rev. 0

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