NJL0281DG datasheet(3/6 Pages) ONSEMI

Part #	NJL0281DG

Description	Complementary ThermalTrak Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NJL0281D (NPN) NJL0302D (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

VCEO(sus)

260

−

Vdc

Collector Cutoff Current

(VCB = 260 Vdc, IE = 0)

ICBO

−

10

mAdc

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

IEBO

−

5

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 500 mAdc, VCE = 5 Vdc)

(IC = 1 Adc, VCE = 5 Vdc)

(IC = 3 Adc, VCE = 5 Vdc)

hFE

75

150

Collector−Emitter Saturation Voltage

(IC = 5 Adc, IB = 0.5 Adc)

VCE(sat)

−

1.0

Vdc

Base−Emitter On Voltage

(IC = 5 Adc, VCE = 5 Vdc)

VCE(on)

−

1.2

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)

fT

30

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Cob

−

400

pF

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 1.0 A, TJ = 25°C)

(iF = 1.0 A, TJ = 150°C)

vF

1.1

0.93

V

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TJ = 25°C)

(Rated dc Voltage, TJ = 150°C)

iR

10

100

mA

Maximum Reverse Recovery Time

(iF = 1.0 A, di/dt = 50 A/ms)

trr

100

ns

2. Diode Pulse Test: Pulse Width = 300

ms, Duty Cycle v 2.0%.

200

0

TC, CASE TEMPERATURE (°C)

40

60

100

120

160

80

140

20

Figure 1. Power Derating

0

20

40

60

80

100

140

120

0.01

0.1

1

10

100

1

10

100

1000

1.0 ms

10 ms

5.0 ms

100 ms

DC

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 2. Safe Operating Area

160

180

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